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MOSFET N-CH 50V 45A TO3P
| Part | Package / Case | Power Dissipation (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | Supplier Device Package | Mounting Type | FET Type | Technology | Vgs(th) (Max) @ Id | Vgs (Max) | Gate Charge (Qg) (Max) @ Vgs [Max] | Drain to Source Voltage (Vdss) | Input Capacitance (Ciss) (Max) @ Vds |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | SC-65-3 TO-3P-3 | 125 W | 45 A | 150 °C | 20 mOhm | 10 V | TO-3P(N) | Through Hole | N-Channel | MOSFET (Metal Oxide) | 3.5 V | 20 V | 68 nC | 50 V | 2300 pF |