TK17E80W,S1X

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Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 800V 17A TO220

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Toshiba Semiconductor and Storage

MOSFET N-CHANNEL 800V 17A TO220

Technical Specifications

Parameters and characteristics for this part

Specification	TK17E80W,S1X

Current - Continuous Drain (Id) @ 25°C	17 A
Drain to Source Voltage (Vdss)	800 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	32 nC
Input Capacitance (Ciss) (Max) @ Vds	2050 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3
Power Dissipation (Max)	180 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	Package / Case	FET Type	Vgs(th) (Max) @ Id	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Current - Continuous Drain (Id) @ 25°C	Technology	Power Dissipation (Max)	Supplier Device Package	Rds On (Max) @ Id, Vgs	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK17E80W,S1X	TO-220-3	N-Channel	4 V	32 nC	150 °C	20 V	10 V	17 A	MOSFET (Metal Oxide)	180 W	TO-220	290 mOhm	2050 pF	Through Hole	800 V

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General part information

N-Channel 800 V 17A (Ta) 180W (Tc) Through Hole TO-220

Technical documentation and resources