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MOSFET N-CHANNEL 800V 17A TO220
| Part | Package / Case | FET Type | Vgs(th) (Max) @ Id | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Current - Continuous Drain (Id) @ 25°C | Technology | Power Dissipation (Max) | Supplier Device Package | Rds On (Max) @ Id, Vgs | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-220-3 | N-Channel | 4 V | 32 nC | 150 °C | 20 V | 10 V | 17 A | MOSFET (Metal Oxide) | 180 W | TO-220 | 290 mOhm | 2050 pF | Through Hole | 800 V |