WNSC2M1K0170WQ

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WeEn Semiconductors Co., Ltd

SIC MOSFETS WNSC2M1K0170W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK

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WNSC2M1K0170WQ

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WeEn Semiconductors Co., Ltd

SIC MOSFETS WNSC2M1K0170W/TO247/STANDARD MARKING * HORIZONTAL, RAIL PACK

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Technical Specifications

Parameters and characteristics for this part

Specification	WNSC2M1K0170WQ

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	1700 V
Drive Voltage (Max Rds On, Min Rds On)	18 V, 15 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	12 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	225 pF
Mounting Type	Through Hole
Operating Temperature [Max]	175 ░C
Operating Temperature [Min]	-55 °C
Package / Case	TO-247-3
Power Dissipation (Max)	79 W
Rds On (Max) @ Id, Vgs	1 Ohm
Supplier Device Package	TO-247-3
Technology	MOSFET (Metal Oxide)
Vgs (Max) [Max]	22 V
Vgs (Max) [Min]	-10 V
Vgs(th) (Max) @ Id	4.2 V

WNSC2 Series

Part	Speed	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
WeEn Semiconductors Co., Ltd WNSC2D03650MBJ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	SMB	130 pF	20 µA	1.7 V	Surface Mount	3 A	650 V	DO-214AA SMB	175 °C
WeEn Semiconductors Co., Ltd WNSC2D201200W6Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	845 pF	200 µA	1.8 V	Through Hole		1.2 kV	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D021200D6J	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	DPAK	95 pF	10 µA	1.65 V	Surface Mount	2 A	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C
WeEn Semiconductors Co., Ltd WNSC2M1K0170WQ			MOSFET (Metal Oxide)	TO-247-3				Through Hole			TO-247-3		1700 V	12 nC	15 V 18 V	225 pF	7 A	N-Channel	4.2 V	-10 V	22 V	-55 °C	175 ░C	79 W	1 Ohm
WeEn Semiconductors Co., Ltd WNSC2D10650WQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	310 pF	50 µA	1.7 V	Through Hole	10 A	650 V	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D20650CJQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-3PF		50 µA	1.7 V	Through Hole		650 V	SC-65-3 TO-3P-3	175 °C														20 A	1 Pair Common Cathode
WeEn Semiconductors Co., Ltd WNSC2D151200W6Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	700 pF	150 µA	1.7 V	Through Hole	15 A	1.2 kV	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D06650XQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-220F	198 pF	30 µA	1.7 V	Through Hole	6 A	650 V	TO-220-2 Full Pack Isolated Tab	175 °C
WeEn Semiconductors Co., Ltd WNSC2D06650DJ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	DPAK	198 pF	30 µA	1.7 V	Surface Mount	6 A	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C
WeEn Semiconductors Co., Ltd WNSC2D1012006Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-220AC	481 pF	50 µA	1.6 V	Through Hole	10 A	1.2 kV	TO-220-2																	175 ░C	-55 C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Arrow	N/A	480	$ 1.92
		1200	$ 1.74
		2640	$ 1.70
Digikey	Bulk	480	$ 3.56

Description

General part information

WNSC2 Series

N-Channel 1700 V 7A (Ta) 79W (Ta) Through Hole TO-247-3

Documents

Technical documentation and resources

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