WNSC2D201200W6Q

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WeEn Semiconductors Co., Ltd

DIODE SIL CARB 1.2KV 20A TO247-2

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WNSC2D201200W6Q

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WeEn Semiconductors Co., Ltd

DIODE SIL CARB 1.2KV 20A TO247-2

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	WNSC2D201200W6Q

Capacitance @ Vr, F	845 pF
Current - Reverse Leakage @ Vr	200 µA
Mounting Type	Through Hole
Operating Temperature - Junction	175 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

WNSC2 Series

Part	Speed	Reverse Recovery Time (trr)	Technology	Supplier Device Package	Capacitance @ Vr, F	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Current - Average Rectified (Io)	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Operating Temperature - Junction	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Current - Continuous Drain (Id) @ 25°C	FET Type	Vgs(th) (Max) @ Id	Vgs (Max) [Min]	Vgs (Max) [Max]	Operating Temperature [Min]	Operating Temperature [Max]	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Current - Average Rectified (Io) (per Diode)	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
WeEn Semiconductors Co., Ltd WNSC2D03650MBJ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	SMB	130 pF	20 µA	1.7 V	Surface Mount	3 A	650 V	DO-214AA SMB	175 °C
WeEn Semiconductors Co., Ltd WNSC2D201200W6Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	845 pF	200 µA	1.8 V	Through Hole		1.2 kV	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D021200D6J	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	DPAK	95 pF	10 µA	1.65 V	Surface Mount	2 A	1.2 kV	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C
WeEn Semiconductors Co., Ltd WNSC2M1K0170WQ			MOSFET (Metal Oxide)	TO-247-3				Through Hole			TO-247-3		1700 V	12 nC	15 V 18 V	225 pF	7 A	N-Channel	4.2 V	-10 V	22 V	-55 °C	175 ░C	79 W	1 Ohm
WeEn Semiconductors Co., Ltd WNSC2D10650WQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	310 pF	50 µA	1.7 V	Through Hole	10 A	650 V	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D20650CJQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-3PF		50 µA	1.7 V	Through Hole		650 V	SC-65-3 TO-3P-3	175 °C														20 A	1 Pair Common Cathode
WeEn Semiconductors Co., Ltd WNSC2D151200W6Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-247-2	700 pF	150 µA	1.7 V	Through Hole	15 A	1.2 kV	TO-247-2	175 °C
WeEn Semiconductors Co., Ltd WNSC2D06650XQ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-220F	198 pF	30 µA	1.7 V	Through Hole	6 A	650 V	TO-220-2 Full Pack Isolated Tab	175 °C
WeEn Semiconductors Co., Ltd WNSC2D06650DJ	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	DPAK	198 pF	30 µA	1.7 V	Surface Mount	6 A	650 V	DPAK (2 Leads + Tab) SC-63 TO-252-3	175 °C
WeEn Semiconductors Co., Ltd WNSC2D1012006Q	No Recovery Time	0 ns	SiC (Silicon Carbide) Schottky	TO-220AC	481 pF	50 µA	1.6 V	Through Hole	10 A	1.2 kV	TO-220-2																	175 ░C	-55 C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1200	$ 3.10

Description

General part information

WNSC2 Series

Diode 1200 V 20A Through Hole TO-247-2

Documents

Technical documentation and resources

No documents available