MSRTA400140A

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GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

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GeneSiC Semiconductor

DIODE MODULE GP 1.4KV 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MSRTA400140A

Current - Average Rectified (Io) (per Diode)	400 A
Current - Reverse Leakage @ Vr	25 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1400 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Current - Reverse Leakage @ Vr	Supplier Device Package	Technology	Diode Configuration	Voltage - Forward (Vf) (Max) @ If	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io) (per Diode)	Package / Case	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Speed	Speed	Mounting Type
GeneSiC Semiconductor MSRTA400140A	25 µA	Three Tower	Standard	1 Pair Common Cathode	1.2 V	1400 V	400 A	Three Tower	150 °C	-55 °C	Standard Recovery >500ns	200 mA	Chassis Mount

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Bulk	25	$ 57.12

General part information

Diode Array 1 Pair Common Cathode 1400 V 400A (DC) Chassis Mount Three Tower

Technical documentation and resources