DIODE MODULE GP 1.4KV 3TOWER
| Part | Current - Reverse Leakage @ Vr | Supplier Device Package | Technology | Diode Configuration | Voltage - Forward (Vf) (Max) @ If | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) (per Diode) | Package / Case | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Speed | Speed | Mounting Type |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
GeneSiC Semiconductor | 25 µA | Three Tower | Standard | 1 Pair Common Cathode | 1.2 V | 1400 V | 400 A | Three Tower | 150 °C | -55 °C | Standard Recovery >500ns | 200 mA | Chassis Mount |