
VIT1080S-E3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 80V 10A TO262AA
Deep-Dive with AI
Search across all available documentation for this part.

VIT1080S-E3/4W
ActiveVishay General Semiconductor - Diodes Division
DIODE SCHOTTKY 80V 10A TO262AA
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | VIT1080S-E3/4W |
|---|---|
| Current - Average Rectified (Io) | 10 A |
| Current - Reverse Leakage @ Vr | 600 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 150 °C |
| Operating Temperature - Junction [Min] | -55 °C |
| Package / Case | TO-262AA, TO-262-3 Long Leads, I2PAK |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-262AA |
| Technology | Schottky |
| Voltage - DC Reverse (Vr) (Max) [Max] | 80 V |
| Voltage - Forward (Vf) (Max) @ If | 810 mV |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 8000 | $ 0.42 | |
Description
General part information
VIT1080 Series
Diode 80 V 10A Through Hole TO-262AA
Documents
Technical documentation and resources