DIODE SCHOTTKY 80V 10A TO262AA
| Part | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Current - Reverse Leakage @ Vr | Speed | Voltage - DC Reverse (Vr) (Max) [Max] | Current - Average Rectified (Io) | Supplier Device Package | Mounting Type | Technology | Voltage - Forward (Vf) (Max) @ If | Package / Case | Current - Average Rectified (Io) (per Diode) | Diode Configuration |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Vishay General Semiconductor - Diodes Division | 150 °C | -55 °C | 600 µA | 200 mA 500 ns | 80 V | 10 A | TO-262AA | Through Hole | Schottky | 810 mV | I2PAK TO-262-3 Long Leads TO-262AA | ||
Vishay General Semiconductor - Diodes Division | 150 °C | -55 °C | 600 µA | 200 mA 500 ns | 80 V | 10 A | TO-262AA | Through Hole | Schottky | 810 mV | I2PAK TO-262-3 Long Leads TO-262AA | ||
Vishay General Semiconductor - Diodes Division | 150 °C | -55 °C | 400 µA | 200 mA 500 ns | 80 V | TO-262AA | Through Hole | Schottky | 720 mV | I2PAK TO-262-3 Long Leads TO-262AA | 5 A | 1 Pair Common Cathode |