TK290A65Y,S4X

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.5A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 11.5A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK290A65Y,S4X

Current - Continuous Drain (Id) @ 25°C	11.5 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	25 nC
Input Capacitance (Ciss) (Max) @ Vds	730 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max) [Max]	35 W
Rds On (Max) @ Id, Vgs	290 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Technology	Input Capacitance (Ciss) (Max) @ Vds	Package / Case	Operating Temperature	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Drain to Source Voltage (Vdss)
Toshiba Semiconductor and Storage TK290A65Y,S4X	4 V	Through Hole	11.5 A	MOSFET (Metal Oxide)	730 pF	TO-220-3 Full Pack	150 °C	290 mOhm	10 V	N-Channel	35 W	TO-220SIS	25 nC	30 V	650 V

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General part information

N-Channel 650 V 11.5A (Tc) 35W (Tc) Through Hole TO-220SIS

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