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MOSFET N-CH 650V 11.5A TO220SIS
| Part | Vgs(th) (Max) @ Id | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Technology | Input Capacitance (Ciss) (Max) @ Vds | Package / Case | Operating Temperature | Rds On (Max) @ Id, Vgs | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Power Dissipation (Max) [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Drain to Source Voltage (Vdss) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 4 V | Through Hole | 11.5 A | MOSFET (Metal Oxide) | 730 pF | TO-220-3 Full Pack | 150 °C | 290 mOhm | 10 V | N-Channel | 35 W | TO-220SIS | 25 nC | 30 V | 650 V |