71V632S5PFG

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Renesas Electronics Corporation

3.3V 64K X 32 SYNCHRONOUS PIPELINED BURST SRAM

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71V632S5PFG

Unknown

Renesas Electronics Corporation

3.3V 64K X 32 SYNCHRONOUS PIPELINED BURST SRAM

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Documents71V632 Data Sheet Datasheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	71V632S5PFG

Access Time	5 ns
Clock Frequency	100 MHz
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	64 K, 32
Memory Size	2 Gbit
Memory Type	Volatile
Mounting Type	Surface Mount
Operating Temperature [Max]	70 °C
Operating Temperature [Min]	0 °C
Package / Case	100-LQFP
Supplier Device Package	100-TQFP (14x14)
Technology	SRAM - Synchronous, SDR
Voltage - Supply [Max]	3.63 V
Voltage - Supply [Min]	3.135 V

71V632 Series

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Part	Technology	Access Time	Memory Size	Clock Frequency	Memory Type	Memory Organization	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Interface	Memory Format	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Renesas Electronics Corporation 71V632S5PFG	SRAM - Synchronous SDR	5 ns	2 Gbit	100 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S7PFG8	SRAM - Synchronous SDR	7 ns	2 Gbit	66 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S7PFG	SRAM - Synchronous SDR	7 ns	2 Gbit	66 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S5PFGI	SRAM - Synchronous SDR	5 ns	2 Gbit	100 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	85 °C	-40 °C

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

71V632 Series

The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.

Documents

Technical documentation and resources

71V632 Data Sheet

Datasheet