71V632 Series

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Manufacturer: Renesas Electronics Corporation

Catalog

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Part	Technology	Access Time	Memory Size	Clock Frequency	Memory Type	Memory Organization	Supplier Device Package	Voltage - Supply [Max]	Voltage - Supply [Min]	Memory Interface	Memory Format	Mounting Type	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]
Renesas Electronics Corporation 71V632S5PFG	SRAM - Synchronous SDR	5 ns	2 Gbit	100 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S7PFG8	SRAM - Synchronous SDR	7 ns	2 Gbit	66 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S7PFG	SRAM - Synchronous SDR	7 ns	2 Gbit	66 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	70 °C	0 °C
Renesas Electronics Corporation 71V632S5PFGI	SRAM - Synchronous SDR	5 ns	2 Gbit	100 MHz	Volatile	32 64 K	100-TQFP (14x14)	3.63 V	3.135 V	Parallel	SRAM	Surface Mount	100-LQFP	85 °C	-40 °C

Catalog

3.3V 64K x 32 Synchronous PipeLined Burst SRAM

Description

The 71V632 3.3V CMOS SRAM is organized as 64K x 32. The pipelined burst architecture provides cost-effective 3-1-1-1 secondary cache performance for processors up to 117MHz. The 71V632 SRAM contains write, data, address, and control registers. The burst mode feature offers the highest level of performance to the system designer, as it can provide four cycles of data for a single address presented to the SRAM.