2SJ304(F)

Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 14A TO220NIS

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Obsolete

Toshiba Semiconductor and Storage

MOSFET P-CH 60V 14A TO220NIS

Technical Specifications

Parameters and characteristics for this part

Specification	2SJ304(F)

Current - Continuous Drain (Id) @ 25°C	14 A
Drain to Source Voltage (Vdss)	60 V
Drive Voltage (Max Rds On, Min Rds On) [Max]	4 V
Drive Voltage (Max Rds On, Min Rds On) [Min]	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	45 nC
Input Capacitance (Ciss) (Max) @ Vds	1200 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	40 W
Rds On (Max) @ Id, Vgs	120 mOhm
Supplier Device Package	TO-220NIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	2 V

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage 2SJ304(F)	120 mOhm	4 V	10 V	2 V	P-Channel	40 W	150 °C	45 nC	TO-220NIS	20 V	14 A	Through Hole	MOSFET (Metal Oxide)	TO-220-3 Full Pack	60 V	1200 pF

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 60 V 14A (Ta) 40W (Tc) Through Hole TO-220NIS

Technical documentation and resources