2SJ304 Series

Catalog

MOSFET P-CH 60V 14A TO220NIS

Part	Rds On (Max) @ Id, Vgs	Drive Voltage (Max Rds On, Min Rds On) [Max]	Drive Voltage (Max Rds On, Min Rds On) [Min]	Vgs(th) (Max) @ Id	FET Type	Power Dissipation (Max)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Supplier Device Package	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Technology	Package / Case	Drain to Source Voltage (Vdss)	Input Capacitance (Ciss) (Max) @ Vds
Toshiba Semiconductor and Storage 2SJ304(F)	120 mOhm	4 V	10 V	2 V	P-Channel	40 W	150 °C	45 nC	TO-220NIS	20 V	14 A	Through Hole	MOSFET (Metal Oxide)	TO-220-3 Full Pack	60 V	1200 pF