RW1C026ZPT2CR

Obsolete

Rohm Semiconductor

MOSFET P-CH 20V 2.5A 6WEMT

Search across all available documentation for this part.

Obsolete

Rohm Semiconductor

MOSFET P-CH 20V 2.5A 6WEMT

Technical Specifications

Parameters and characteristics for this part

Specification	RW1C026ZPT2CR

Current - Continuous Drain (Id) @ 25°C	2.5 A
Drain to Source Voltage (Vdss)	20 V
Drive Voltage (Max Rds On, Min Rds On)	4.5 V, 1.5 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	10 nC
Input Capacitance (Ciss) (Max) @ Vds	1250 pF
Mounting Type	Surface Mount
Operating Temperature	150 °C
Package / Case	6-SMD, Flat Leads
Power Dissipation (Max)	700 mW
Rds On (Max) @ Id, Vgs [Max]	70 mOhm
Supplier Device Package	6-WEMT
Technology	MOSFET (Metal Oxide)
Vgs (Max)	10 V
Vgs(th) (Max) @ Id	1 V

Part	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	FET Type	Rds On (Max) @ Id, Vgs [Max]	Drain to Source Voltage (Vdss)	Operating Temperature	Gate Charge (Qg) (Max) @ Vgs [Max]	Input Capacitance (Ciss) (Max) @ Vds	Mounting Type	Package / Case	Current - Continuous Drain (Id) @ 25°C	Technology	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Supplier Device Package
Rohm Semiconductor RW1C026ZPT2CR	10 V	1.5 V 4.5 V	P-Channel	70 mOhm	20 V	150 °C	10 nC	1250 pF	Surface Mount	6-SMD Flat Leads	2.5 A	MOSFET (Metal Oxide)	1 V	700 mW	6-WEMT

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

P-Channel 20 V 2.5A (Ta) 700mW (Ta) Surface Mount 6-WEMT

Technical documentation and resources

No documents available