MOSFET P-CH 20V 2.5A 6WEMT
| Part | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | FET Type | Rds On (Max) @ Id, Vgs [Max] | Drain to Source Voltage (Vdss) | Operating Temperature | Gate Charge (Qg) (Max) @ Vgs [Max] | Input Capacitance (Ciss) (Max) @ Vds | Mounting Type | Package / Case | Current - Continuous Drain (Id) @ 25°C | Technology | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Supplier Device Package |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Rohm Semiconductor | 10 V | 1.5 V 4.5 V | P-Channel | 70 mOhm | 20 V | 150 °C | 10 nC | 1250 pF | Surface Mount | 6-SMD Flat Leads | 2.5 A | MOSFET (Metal Oxide) | 1 V | 700 mW | 6-WEMT |