TPCP8407,LF

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

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Toshiba Semiconductor and Storage

MOSFET N/P-CH 40V 5A/4A PS-8

Technical Specifications

Parameters and characteristics for this part

Specification	TPCP8407,LF

Configuration	N and P-Channel
Current - Continuous Drain (Id) @ 25°C	5 A
Current - Continuous Drain (Id) @ 25°C	4 A
Drain to Source Voltage (Vdss)	40 V
Gate Charge (Qg) (Max) @ Vgs	11.8 nC
Gate Charge (Qg) (Max) @ Vgs	18 nC
Grade	Automotive
Mounting Type	Surface Mount
Operating Temperature	150 °C
Power - Max [Max]	690 mW
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	56.8 mOhm, 36.3 mOhm
Supplier Device Package	PS-8
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	3 V

Part	Gate Charge (Qg) (Max) @ Vgs	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Drain to Source Voltage (Vdss)	Configuration	Technology	Rds On (Max) @ Id, Vgs	Mounting Type	Supplier Device Package	Vgs(th) (Max) @ Id	Current - Continuous Drain (Id) @ 25°C	Current - Continuous Drain (Id) @ 25°C	Grade	Qualification	Power - Max [Max]
Toshiba Semiconductor and Storage TPCP8407,LF	11.8 nC	18 nC	150 °C	40 V	N and P-Channel	MOSFET (Metal Oxide)	36.3 mOhm 56.8 mOhm	Surface Mount	PS-8	3 V	5 A	4 A	Automotive	AEC-Q101	690 mW

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General part information

Mosfet Array 40V 5A (Ta), 4A (Ta) 690mW (Ta) Surface Mount PS-8

Technical documentation and resources