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MOSFET N/P-CH 40V 5A/4A PS-8
| Part | Gate Charge (Qg) (Max) @ Vgs | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Drain to Source Voltage (Vdss) | Configuration | Technology | Rds On (Max) @ Id, Vgs | Mounting Type | Supplier Device Package | Vgs(th) (Max) @ Id | Current - Continuous Drain (Id) @ 25°C | Current - Continuous Drain (Id) @ 25°C | Grade | Qualification | Power - Max [Max] |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 11.8 nC | 18 nC | 150 °C | 40 V | N and P-Channel | MOSFET (Metal Oxide) | 36.3 mOhm 56.8 mOhm | Surface Mount | PS-8 | 3 V | 5 A | 4 A | Automotive | AEC-Q101 | 690 mW |