TK40J20D,S1F(O

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Toshiba Semiconductor and Storage

MOSFET N-CH 200V 40A TO3P

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Toshiba Semiconductor and Storage

MOSFET N-CH 200V 40A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	TK40J20D,S1F(O

Current - Continuous Drain (Id) @ 25°C	40 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	100 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	4300 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	260 W
Rds On (Max) @ Id, Vgs [Max]	44 mOhm
Supplier Device Package	TO-3P(N)
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	3.5 V

Part	Supplier Device Package	FET Type	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Operating Temperature	Vgs(th) (Max) @ Id	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs [Max]	Gate Charge (Qg) (Max) @ Vgs [Max]	Drive Voltage (Max Rds On, Min Rds On)	Input Capacitance (Ciss) (Max) @ Vds [Max]	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Package / Case
Toshiba Semiconductor and Storage TK40J20D,S1F(O	TO-3P(N)	N-Channel	20 V	40 A	150 °C	3.5 V	260 W	44 mOhm	100 nC	10 V	4300 pF	200 V	MOSFET (Metal Oxide)	Through Hole	SC-65-3 TO-3P-3

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

N-Channel 200 V 40A (Ta) 260W (Tc) Through Hole TO-3P(N)

Technical documentation and resources

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