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MOSFET N-CH 200V 40A TO3P
| Part | Supplier Device Package | FET Type | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Operating Temperature | Vgs(th) (Max) @ Id | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs [Max] | Gate Charge (Qg) (Max) @ Vgs [Max] | Drive Voltage (Max Rds On, Min Rds On) | Input Capacitance (Ciss) (Max) @ Vds [Max] | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | TO-3P(N) | N-Channel | 20 V | 40 A | 150 °C | 3.5 V | 260 W | 44 mOhm | 100 nC | 10 V | 4300 pF | 200 V | MOSFET (Metal Oxide) | Through Hole | SC-65-3 TO-3P-3 |