TK28N65W,S1F

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO247

Technical Specifications

Parameters and characteristics for this part

Specification	TK28N65W,S1F

Current - Continuous Drain (Id) @ 25°C	27.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-247-3
Power Dissipation (Max) [Max]	230 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-247
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	FET Type	Operating Temperature	Supplier Device Package	Vgs(th) (Max) @ Id	Input Capacitance (Ciss) (Max) @ Vds [Max]	Power Dissipation (Max) [Max]	Package / Case	Technology	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs (Max)	Current - Continuous Drain (Id) @ 25°C	Rds On (Max) @ Id, Vgs
Toshiba Semiconductor and Storage TK28N65W,S1F	N-Channel	150 °C	TO-247	3.5 V	3000 pF	230 W	TO-247-3	MOSFET (Metal Oxide)	Through Hole	650 V	10 V	75 nC	30 V	27.6 A	110 mOhm

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General part information

N-Channel 650 V 27.6A (Ta) 230W (Tc) Through Hole TO-247

Technical documentation and resources