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MOSFET N-CH 650V 27.6A TO247
| Part | FET Type | Operating Temperature | Supplier Device Package | Vgs(th) (Max) @ Id | Input Capacitance (Ciss) (Max) @ Vds [Max] | Power Dissipation (Max) [Max] | Package / Case | Technology | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs (Max) | Current - Continuous Drain (Id) @ 25°C | Rds On (Max) @ Id, Vgs |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 150 °C | TO-247 | 3.5 V | 3000 pF | 230 W | TO-247-3 | MOSFET (Metal Oxide) | Through Hole | 650 V | 10 V | 75 nC | 30 V | 27.6 A | 110 mOhm |