TK28A65W,S5X

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO220SIS

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Toshiba Semiconductor and Storage

MOSFET N-CH 650V 27.6A TO220SIS

Technical Specifications

Parameters and characteristics for this part

Specification	TK28A65W,S5X

Current - Continuous Drain (Id) @ 25°C	27.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	75 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]	3000 pF
Mounting Type	Through Hole
Operating Temperature	150 °C
Package / Case	TO-220-3 Full Pack
Power Dissipation (Max)	45 W
Rds On (Max) @ Id, Vgs	110 mOhm
Supplier Device Package	TO-220SIS
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	3.5 V

Part	Gate Charge (Qg) (Max) @ Vgs [Max]	Vgs(th) (Max) @ Id	Technology	Package / Case	Current - Continuous Drain (Id) @ 25°C	FET Type	Input Capacitance (Ciss) (Max) @ Vds [Max]	Vgs (Max)	Power Dissipation (Max)	Rds On (Max) @ Id, Vgs	Supplier Device Package	Mounting Type	Drain to Source Voltage (Vdss)	Drive Voltage (Max Rds On, Min Rds On)	Operating Temperature
Toshiba Semiconductor and Storage TK28A65W,S5X	75 nC	3.5 V	MOSFET (Metal Oxide)	TO-220-3 Full Pack	27.6 A	N-Channel	3000 pF	30 V	45 W	110 mOhm	TO-220SIS	Through Hole	650 V	10 V	150 °C

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General part information

N-Channel 650 V 27.6A (Ta) 45W (Tc) Through Hole TO-220SIS

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