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MOSFET N-CH 650V 27.6A TO220SIS
| Part | Gate Charge (Qg) (Max) @ Vgs [Max] | Vgs(th) (Max) @ Id | Technology | Package / Case | Current - Continuous Drain (Id) @ 25°C | FET Type | Input Capacitance (Ciss) (Max) @ Vds [Max] | Vgs (Max) | Power Dissipation (Max) | Rds On (Max) @ Id, Vgs | Supplier Device Package | Mounting Type | Drain to Source Voltage (Vdss) | Drive Voltage (Max Rds On, Min Rds On) | Operating Temperature |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | 75 nC | 3.5 V | MOSFET (Metal Oxide) | TO-220-3 Full Pack | 27.6 A | N-Channel | 3000 pF | 30 V | 45 W | 110 mOhm | TO-220SIS | Through Hole | 650 V | 10 V | 150 °C |