SCT3060ARHRC15

Active

Rohm Semiconductor

650V, 39A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

Search across all available documentation for this part.

DocumentsTechnical Data Sheet EN Thermal Resistance Measurement Method for SiC MOSFET +41

SCT3060ARHRC15

Active

Rohm Semiconductor

650V, 39A, 4-PIN THD, TRENCH-STRUCTURE, SILICON-CARBIDE (SIC) MOSFET FOR AUTOMOTIVE

Deep-Dive with AI

DocumentsTechnical Data Sheet EN Thermal Resistance Measurement Method for SiC MOSFET +41

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	SCT3060ARHRC15

Current - Continuous Drain (Id) @ 25°C	39 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	18 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs [Max]	58 nC
Grade	Automotive
Input Capacitance (Ciss) (Max) @ Vds	852 pF
Mounting Type	Through Hole
Operating Temperature	175 °C
Package / Case	TO-247-4
Power Dissipation (Max) [Max]	165 W
Qualification	AEC-Q101
Rds On (Max) @ Id, Vgs	78 mOhm
Supplier Device Package	TO-247-4L
Technology	MOSFET (Metal Oxide)

SCT3060ARHR Series

650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Package / Case	Power Dissipation (Max) [Max]	Grade	Qualification
Rohm Semiconductor SCT3060ARC15	78 mOhm	Through Hole	SiC (Silicon Carbide Junction Transistor)	TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W
Rohm Semiconductor SCT3060ARHRC15	78 mOhm	Through Hole	MOSFET (Metal Oxide)	TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W	Automotive	AEC-Q101
Rohm Semiconductor SCT3060ALHRC11	78 mOhm	Through Hole		TO-247N	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-3	165 W	Automotive	AEC-Q101
Rohm Semiconductor SCT3060ARC14	78 mOhm	Through Hole		TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 14.62
		10	$ 12.88
		450	$ 10.09
Newark	Each	1	$ 16.32
		10	$ 14.83
		25	$ 14.34
		50	$ 13.86
		100	$ 13.37
		250	$ 13.09
		900	$ 13.08

Description

General part information

SCT3060ARHR Series

SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.