SCT3060ARHR Series

650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Catalog

650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Part	Rds On (Max) @ Id, Vgs	Mounting Type	Technology	Supplier Device Package	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Drain to Source Voltage (Vdss)	Gate Charge (Qg) (Max) @ Vgs [Max]	Operating Temperature	Package / Case	Power Dissipation (Max) [Max]	Grade	Qualification
Rohm Semiconductor SCT3060ARC15	78 mOhm	Through Hole	SiC (Silicon Carbide Junction Transistor)	TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W
Rohm Semiconductor SCT3060ARHRC15	78 mOhm	Through Hole	MOSFET (Metal Oxide)	TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W	Automotive	AEC-Q101
Rohm Semiconductor SCT3060ALHRC11	78 mOhm	Through Hole		TO-247N	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-3	165 W	Automotive	AEC-Q101
Rohm Semiconductor SCT3060ARC14	78 mOhm	Through Hole		TO-247-4L	39 A	852 pF	N-Channel	18 V	650 V	58 nC	175 °C	TO-247-4	165 W

Catalog

650V, 39A, 4-pin THD, Trench-structure, Silicon-carbide (SiC) MOSFET for Automotive

Key Features

• Qualified to AEC-Q101, Low on-resistance, Fast switching speed, Fast reverse recovery, Easy to parallel, Simple to drive, Pb-free lead plating ; RoHS compliant

Description

SCT3060AR is an SiC MOSFET featuring a trench gate structure optimized for server power supplies, solar power inverters, and EV charging stations requiring high efficiency. A new 4-pin package is used that separates the power and driver source terminals, making it possible to maximize high-speed switching performance. This improves turn ON loss in particular, and as a result the total turn ON and turn OFF losses can be reduced by as much as 35% compared with the conventional 3-pin package (TO-247N).A pioneer and industry leader in SiC technology, ROHM was the first supplier to mass produce trench-type MOSFETs that further improve efficiency while reducing power consumption over existing SiC MOSFETs.