MURT10010R

Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 100V 50A 3TOWER

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Obsolete

GeneSiC Semiconductor

DIODE MODULE GP 100V 50A 3TOWER

Technical Specifications

Parameters and characteristics for this part

Specification	MURT10010R

Current - Average Rectified (Io) (per Diode)	50 A
Diode Configuration	1 Pair Common Anode
Mounting Type	Chassis Mount
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-55 °C
Package / Case	Three Tower
Reverse Recovery Time (trr)	75 ns
Speed	200 mA, 500 ns
Supplier Device Package	Three Tower
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	100 V
Voltage - Forward (Vf) (Max) @ If	1.3 V

Part	Speed	Package / Case	Current - Average Rectified (Io) (per Diode)	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MURT10040	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	90 ns	Chassis Mount	1 Pair Common Cathode	400 V	150 °C	-55 °C	1.35 V
GeneSiC Semiconductor MURT10005R	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	50 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10010R	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	100 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10010	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	100 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10020	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	200 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10060	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	600 V	150 °C	-55 °C	1.7 V
GeneSiC Semiconductor MURT10040R	200 mA 500 ns	Three Tower	50 A	Reverse Polarity Standard	Three Tower	90 ns	Chassis Mount	1 Pair Common Anode	400 V	150 °C	-55 °C	1.35 V
GeneSiC Semiconductor MURT10060R	200 mA 500 ns	Three Tower	50 A	Reverse Polarity Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	600 V	150 °C	-55 °C	1.7 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

Diode Array 1 Pair Common Anode 100 V 50A Chassis Mount Three Tower

Technical documentation and resources