MURT100 Series

Catalog

DIODE MODULE GP 400V 50A 3TOWER

Part	Speed	Package / Case	Current - Average Rectified (Io) (per Diode)	Technology	Supplier Device Package	Reverse Recovery Time (trr)	Mounting Type	Diode Configuration	Voltage - DC Reverse (Vr) (Max) [Max]	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor MURT10040	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	90 ns	Chassis Mount	1 Pair Common Cathode	400 V	150 °C	-55 °C	1.35 V
GeneSiC Semiconductor MURT10005R	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	50 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10010R	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	100 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10010	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	100 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10020	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	200 V	150 °C	-55 °C	1.3 V
GeneSiC Semiconductor MURT10060	200 mA 500 ns	Three Tower	50 A	Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Cathode	600 V	150 °C	-55 °C	1.7 V
GeneSiC Semiconductor MURT10040R	200 mA 500 ns	Three Tower	50 A	Reverse Polarity Standard	Three Tower	90 ns	Chassis Mount	1 Pair Common Anode	400 V	150 °C	-55 °C	1.35 V
GeneSiC Semiconductor MURT10060R	200 mA 500 ns	Three Tower	50 A	Reverse Polarity Standard	Three Tower	75 ns	Chassis Mount	1 Pair Common Anode	600 V	150 °C	-55 °C	1.7 V