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71V3557S80BGI - 71V3557 Block Diagram - 128K x 36

71V3557S80BGI

Obsolete
Renesas Electronics Corporation

3.3V 128KX36 ZBT SYNCHRONOUS FLOW-THROUGH SRAM WITH 3.3V I/O

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71V3557S80BGI - 71V3557 Block Diagram - 128K x 36

71V3557S80BGI

Obsolete
Renesas Electronics Corporation

3.3V 128KX36 ZBT SYNCHRONOUS FLOW-THROUGH SRAM WITH 3.3V I/O

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Technical Specifications

Parameters and characteristics for this part

Specification71V3557S80BGI
Access Time8 ns
Memory FormatSRAM
Memory InterfaceParallel
Memory Organization128K x 36
Memory Size4.5 Mbit
Memory TypeVolatile
Mounting TypeSurface Mount
Operating Temperature [Max]85 °C
Operating Temperature [Min]-40 °C
Package / Case119-BGA
Supplier Device Package119-PBGA (14x22)
TechnologySRAM - Synchronous, SDR (ZBT)
Voltage - Supply [Max]3.465 V
Voltage - Supply [Min]3.135 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

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Description

General part information

71V3557 Series

The 71V3557 3.3V CMOS Synchronous SRAM is organized as 128K x 36. It is designed to eliminate dead bus cycles when turning the bus around between reads and writes, or writes and reads. Thus it has been given the name ZBTTM, or Zero Bus Turnaround. The 71V3557 contains address, data-in and control signal registers. The outputs are flow-through (no output data register).