TP65H480G4JSG-TR

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GANFET N-CH 650V 3.6A 3PQFN

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Transphorm

GANFET N-CH 650V 3.6A 3PQFN

Technical Specifications

Parameters and characteristics for this part

Specification	TP65H480G4JSG-TR

Current - Continuous Drain (Id) @ 25°C	3.6 A
Drain to Source Voltage (Vdss)	650 V
Drive Voltage (Max Rds On, Min Rds On)	8 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	9 nC
Input Capacitance (Ciss) (Max) @ Vds	760 pF
Mounting Type	Surface Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	3-PowerTDFN
Power Dissipation (Max) [Max]	13.2 W
Technology	GaNFET (Cascode Gallium Nitride FET)
Vgs (Max)	18 V
Vgs(th) (Max) @ Id [Max]	2.8 V

Part	Vgs (Max)	FET Type	Drive Voltage (Max Rds On, Min Rds On)	Mounting Type	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature [Min]	Operating Temperature [Max]	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Technology	Current - Continuous Drain (Id) @ 25°C	Vgs(th) (Max) @ Id [Max]	Package / Case
Transphorm TP65H480G4JSG-TR	18 V	N-Channel	8 V	Surface Mount	9 nC	-55 °C	150 °C	760 pF	650 V	13.2 W	GaNFET (Cascode Gallium Nitride FET)	3.6 A	2.8 V	3-PowerTDFN

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

N-Channel 650 V 3.6A (Tc) 13.2W (Tc) Surface Mount 3-PQFN (5x6)

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