SFH9240

Obsolete

ON Semiconductor

MOSFET P-CH 200V 11A TO3P

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Obsolete

ON Semiconductor

MOSFET P-CH 200V 11A TO3P

Technical Specifications

Parameters and characteristics for this part

Specification	SFH9240

Current - Continuous Drain (Id) @ 25°C	11 A
Drain to Source Voltage (Vdss)	200 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	P-Channel
Gate Charge (Qg) (Max) @ Vgs	59 nC
Input Capacitance (Ciss) (Max) @ Vds	1585 pF
Mounting Type	Through Hole
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	SC-65-3, TO-3P-3
Power Dissipation (Max)	126 W
Rds On (Max) @ Id, Vgs	500 mOhm
Supplier Device Package	TO-3P
Technology	MOSFET (Metal Oxide)
Vgs (Max)	30 V
Vgs(th) (Max) @ Id	4 V

Part	Vgs(th) (Max) @ Id	Operating Temperature [Min]	Operating Temperature [Max]	Current - Continuous Drain (Id) @ 25°C	Supplier Device Package	Rds On (Max) @ Id, Vgs	Package / Case	Input Capacitance (Ciss) (Max) @ Vds	Drain to Source Voltage (Vdss)	Technology	Mounting Type	Vgs (Max)	FET Type	Gate Charge (Qg) (Max) @ Vgs	Power Dissipation (Max)	Drive Voltage (Max Rds On, Min Rds On)
ON Semiconductor SFH9240	4 V	-55 °C	150 °C	11 A	TO-3P	500 mOhm	SC-65-3 TO-3P-3	1585 pF	200 V	MOSFET (Metal Oxide)	Through Hole	30 V	P-Channel	59 nC	126 W	10 V

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

General part information

P-Channel 200 V 11A (Tc) 126W (Tc) Through Hole TO-3P

Technical documentation and resources