MOSFET P-CH 200V 11A TO3P
| Part | Vgs(th) (Max) @ Id | Operating Temperature [Min] | Operating Temperature [Max] | Current - Continuous Drain (Id) @ 25°C | Supplier Device Package | Rds On (Max) @ Id, Vgs | Package / Case | Input Capacitance (Ciss) (Max) @ Vds | Drain to Source Voltage (Vdss) | Technology | Mounting Type | Vgs (Max) | FET Type | Gate Charge (Qg) (Max) @ Vgs | Power Dissipation (Max) | Drive Voltage (Max Rds On, Min Rds On) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
ON Semiconductor | 4 V | -55 °C | 150 °C | 11 A | TO-3P | 500 mOhm | SC-65-3 TO-3P-3 | 1585 pF | 200 V | MOSFET (Metal Oxide) | Through Hole | 30 V | P-Channel | 59 nC | 126 W | 10 V |