1N5408GP-E3/54

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

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Vishay General Semiconductor - Diodes Division

DIODE GEN PURP 1KV 3A DO201AD

Technical Specifications

Parameters and characteristics for this part

Specification	1N5408GP-E3/54

Capacitance @ Vr, F	30 pF
Current - Average Rectified (Io)	3 A
Current - Reverse Leakage @ Vr	5 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-50 °C
Package / Case	DO-201AD, Axial
Speed	Standard Recovery >500ns
Speed	200 mA
Supplier Device Package	DO-201AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	1.2 V

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Speed	Speed	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Vishay General Semiconductor - Diodes Division 1N5408GP-E3/54	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD
Vishay General Semiconductor - Diodes Division 1N5408-E3/54	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD
Vishay General Semiconductor - Diodes Division 1N5408-E3/73	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD

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General part information

Diode 1000 V 3A Through Hole DO-201AD

Technical documentation and resources