1N5408 Series

Catalog

DIODE GEN PURP 1KV 3A DO201AD

Part	Operating Temperature - Junction [Min]	Operating Temperature - Junction [Max]	Technology	Mounting Type	Speed	Speed	Current - Reverse Leakage @ Vr	Package / Case	Capacitance @ Vr, F	Voltage - DC Reverse (Vr) (Max) [Max]	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Supplier Device Package
Vishay General Semiconductor - Diodes Division 1N5408GP-E3/54	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD
Vishay General Semiconductor - Diodes Division 1N5408-E3/54	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD
Vishay General Semiconductor - Diodes Division 1N5408-E3/73	-50 °C	150 °C	Standard	Through Hole	Standard Recovery >500ns	200 mA	5 µA	DO-201AD Axial	30 pF	1000 V	3 A	1.2 V	DO-201AD