6116LA35TDB

Obsolete

Renesas Electronics Corporation

5.0V 2K X 8 ASYNCHRONOUS STATIC RAM

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DocumentsDatasheet 6116SA_LA Data Sheet

6116LA35TDB

Obsolete

Renesas Electronics Corporation

5.0V 2K X 8 ASYNCHRONOUS STATIC RAM

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DocumentsDatasheet 6116SA_LA Data Sheet

Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	6116LA35TDB

Access Time	35 ns
Memory Format	SRAM
Memory Interface	Parallel
Memory Organization	2K x 8
Memory Size	16 Kbit
Memory Type	Volatile
Mounting Type	Through Hole
Operating Temperature [Max]	125 °C
Operating Temperature [Min]	-55 °C
Package / Case	24-CDIP
Supplier Device Package	24-CDIP
Technology	SRAM - Asynchronous
Voltage - Supply [Max]	5.5 V
Voltage - Supply [Min]	4.5 V
Write Cycle Time - Word, Page	35 ns

6116SA Series

5.0V 2K x 8 Asynchronous Static RAM

Part	Package / Case	Package / Case	Package / Case	Supplier Device Package	Memory Format	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Memory Interface	Write Cycle Time - Word, Page	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Organization	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation 6116LA20TPG	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	20 ns	SRAM - Asynchronous	Through Hole	70 °C	0 °C	20 ns	2K x 8
Renesas Electronics Corporation 6116SA19TPGI	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	19 ns	SRAM - Asynchronous	Through Hole	85 °C	-40 °C	19 ns	2K x 8
Renesas Electronics Corporation 6116SA150DB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	150 ns	SRAM - Asynchronous	Through Hole			150 ns	2K x 8	0.6 in	125 °C	-55 °C
Renesas Electronics Corporation 6116LA120DB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	120 ns	SRAM - Asynchronous	Through Hole			120 ns	2K x 8	0.6 in	125 °C	-55 °C
Renesas Electronics Corporation 6116LA25TPG	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	25 ns	SRAM - Asynchronous	Through Hole	70 °C	0 °C	25 ns	2K x 8
Renesas Electronics Corporation 6116SA55TDB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel		SRAM - Asynchronous	Through Hole			55 ns	2K x 8	0.6 in	125 °C	-55 °C	55 ns	55 ns
Renesas Electronics Corporation 6116LA90TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	90 ns	SRAM - Asynchronous	Through Hole			90 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116LA35TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	35 ns	SRAM - Asynchronous	Through Hole			35 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116SA90TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	90 ns	SRAM - Asynchronous	Through Hole			90 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116SA45TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel		SRAM - Asynchronous	Through Hole			45 ns	2K x 8		125 °C	-55 °C	45 ns	45 ns

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Description

General part information

6116SA Series

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.