6116SA Series

5.0V 2K x 8 Asynchronous Static RAM

Manufacturer: Renesas Electronics Corporation

Catalog

5.0V 2K x 8 Asynchronous Static RAM

Part	Package / Case	Package / Case	Package / Case	Supplier Device Package	Memory Format	Memory Type	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Size	Memory Interface	Write Cycle Time - Word, Page	Technology	Mounting Type	Operating Temperature [Max]	Operating Temperature [Min]	Access Time	Memory Organization	Package / Case	Operating Temperature [Max]	Operating Temperature [Min]	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]
Renesas Electronics Corporation 6116LA20TPG	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	20 ns	SRAM - Asynchronous	Through Hole	70 °C	0 °C	20 ns	2K x 8
Renesas Electronics Corporation 6116SA19TPGI	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	19 ns	SRAM - Asynchronous	Through Hole	85 °C	-40 °C	19 ns	2K x 8
Renesas Electronics Corporation 6116SA150DB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	150 ns	SRAM - Asynchronous	Through Hole			150 ns	2K x 8	0.6 in	125 °C	-55 °C
Renesas Electronics Corporation 6116LA120DB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	120 ns	SRAM - Asynchronous	Through Hole			120 ns	2K x 8	0.6 in	125 °C	-55 °C
Renesas Electronics Corporation 6116LA25TPG	0.3 in	24-DIP	7.62 mm	24-PDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	25 ns	SRAM - Asynchronous	Through Hole	70 °C	0 °C	25 ns	2K x 8
Renesas Electronics Corporation 6116SA55TDB	15.24 mm	24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel		SRAM - Asynchronous	Through Hole			55 ns	2K x 8	0.6 in	125 °C	-55 °C	55 ns	55 ns
Renesas Electronics Corporation 6116LA90TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	90 ns	SRAM - Asynchronous	Through Hole			90 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116LA35TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	35 ns	SRAM - Asynchronous	Through Hole			35 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116SA90TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel	90 ns	SRAM - Asynchronous	Through Hole			90 ns	2K x 8		125 °C	-55 °C
Renesas Electronics Corporation 6116SA45TDB		24-CDIP		24-CDIP	SRAM	Volatile	4.5 V	5.5 V	16 Kbit	Parallel		SRAM - Asynchronous	Through Hole			45 ns	2K x 8		125 °C	-55 °C	45 ns	45 ns

Catalog

5.0V 2K x 8 Asynchronous Static RAM

Description

The 6116 5V CMOS SRAM is organized as 2K x 8. The 6116 offers a reduced power standby mode.The low-power (LA) version also offers a battery backup data retention capability where the circuit typically consumes only 1μW to 4μW operating off a 2V battery. All inputs and outputs are TTL-compatible. Fully static asynchronous circuitry is used, requiring no clocks or refreshing for operation. Military grade product is available.