
BYV30JT-600PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A TO3P
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BYV30JT-600PQ
ActiveWeEn Semiconductors Co., Ltd
DIODE GEN PURP 600V 30A TO3P
Deep-Dive with AI
Technical Specifications
Parameters and characteristics for this part
| Specification | BYV30JT-600PQ |
|---|---|
| Current - Average Rectified (Io) | 30 A |
| Current - Reverse Leakage @ Vr | 10 µA |
| Mounting Type | Through Hole |
| Operating Temperature - Junction [Max] | 175 °C |
| Package / Case | SC-65-3, TO-3P-3 |
| Reverse Recovery Time (trr) | 65 ns |
| Speed | 200 mA, 500 ns |
| Supplier Device Package | TO-3P |
| Technology | Standard |
| Voltage - DC Reverse (Vr) (Max) [Max] | 600 V |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V |
Pricing
Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly
| Distributor | Package | Quantity | $ | |
|---|---|---|---|---|
| Digikey | Tube | 1 | $ 1.97 | |
| 10 | $ 1.63 | |||
| 480 | $ 1.10 | |||
| 960 | $ 0.93 | |||
| 2400 | $ 0.89 | |||
| 5280 | $ 0.85 | |||
| 10080 | $ 0.82 | |||
Description
General part information
BYV30 Series
Diode 600 V 30A Through Hole TO-3P
Documents
Technical documentation and resources
No documents available