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BYV30JT-600PQ - BYV30JT-600PQ

BYV30JT-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO3P

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BYV30JT-600PQ - BYV30JT-600PQ

BYV30JT-600PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO3P

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Technical Specifications

Parameters and characteristics for this part

SpecificationBYV30JT-600PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseSC-65-3, TO-3P-3
Reverse Recovery Time (trr)65 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-3P
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 1.97
10$ 1.63
480$ 1.10
960$ 0.93
2400$ 0.89
5280$ 0.85
10080$ 0.82

Description

General part information

BYV30 Series

Diode 600 V 30A Through Hole TO-3P

Documents

Technical documentation and resources

No documents available