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BYV30X-600PQ - BYT79X-600PQ

BYV30X-600PQ

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WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO220FP

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BYV30X-600PQ - BYT79X-600PQ

BYV30X-600PQ

Active
WeEn Semiconductors Co., Ltd

DIODE GEN PURP 600V 30A TO220FP

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationBYV30X-600PQ
Current - Average Rectified (Io)30 A
Current - Reverse Leakage @ Vr10 µA
Mounting TypeThrough Hole
Operating Temperature - Junction [Max]175 °C
Package / CaseTO-220-2 Full Pack, Isolated Tab
Reverse Recovery Time (trr)75 ns
Speed200 mA, 500 ns
Supplier Device PackageTO-220FP
TechnologyStandard
Voltage - DC Reverse (Vr) (Max) [Max]600 V
Voltage - Forward (Vf) (Max) @ If1.55 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 6000$ 0.81

Description

General part information

BYV30 Series

Diode 600 V 30A Through Hole TO-220FP

Documents

Technical documentation and resources

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