E6D30065H

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Wolfspeed

DIODE SIC 650V TO247

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Wolfspeed

DIODE SIC 650V TO247

Technical Specifications

Parameters and characteristics for this part

Specification	E6D30065H

Capacitance @ Vr, F	1850 pF
Current - Average Rectified (Io)	84 A
Current - Reverse Leakage @ Vr	100 µA
Grade	Automotive
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-2
Qualification	AEC-Q101
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-2
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	650 V
Voltage - Forward (Vf) (Max) @ If	1.5 V

Part	Speed	Current - Reverse Leakage @ Vr	Technology	Grade	Package / Case	Capacitance @ Vr, F	Current - Average Rectified (Io)	Voltage - Forward (Vf) (Max) @ If	Qualification	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Mounting Type	Diode Configuration	Current - Average Rectified (Io) (per Diode)
Wolfspeed E6D30065A	No Recovery Time	100 µA	SiC (Silicon Carbide) Schottky	Automotive	TO-220-2	1864 pF	92.5 A	1.5 V	AEC-Q101	650 V	TO-220-2	175 ░C	-55 C	Through Hole
Wolfspeed E6D30065H	No Recovery Time	100 µA	SiC (Silicon Carbide) Schottky	Automotive	TO-247-2	1850 pF	84 A	1.5 V	AEC-Q101	650 V	TO-247-2	175 ░C	-55 C	Through Hole
Wolfspeed E6D30065G	No Recovery Time	100 µA	SiC (Silicon Carbide) Schottky		D2PAK (2 Leads + Tab) TO-263-3 TO-263AB	1841 pF	95 A	1.5 V		650 V	TO-263-2	175 ░C	-55 C	Surface Mount
Wolfspeed E6D30065D	No Recovery Time	50 µA	SiC (Silicon Carbide) Schottky		TO-247-3			1.5 V		650 V	TO-247-3	175 ░C	-55 C	Through Hole	1 Pair Common Cathode	50 A

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 650 V 84A Through Hole TO-247-2

Technical documentation and resources