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DIODE SIC 650V TO220
| Part | Speed | Reverse Recovery Time (trr) | Current - Reverse Leakage @ Vr | Technology | Grade | Package / Case | Capacitance @ Vr, F | Current - Average Rectified (Io) | Voltage - Forward (Vf) (Max) @ If | Qualification | Voltage - DC Reverse (Vr) (Max) [Max] | Supplier Device Package | Operating Temperature - Junction [Max] | Operating Temperature - Junction [Min] | Mounting Type | Diode Configuration | Current - Average Rectified (Io) (per Diode) |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Wolfspeed | No Recovery Time | 0 ns | 100 µA | SiC (Silicon Carbide) Schottky | Automotive | TO-220-2 | 1864 pF | 92.5 A | 1.5 V | AEC-Q101 | 650 V | TO-220-2 | 175 ░C | -55 C | Through Hole | ||
Wolfspeed | No Recovery Time | 0 ns | 100 µA | SiC (Silicon Carbide) Schottky | Automotive | TO-247-2 | 1850 pF | 84 A | 1.5 V | AEC-Q101 | 650 V | TO-247-2 | 175 ░C | -55 C | Through Hole | ||
Wolfspeed | No Recovery Time | 0 ns | 100 µA | SiC (Silicon Carbide) Schottky | D2PAK (2 Leads + Tab) TO-263-3 TO-263AB | 1841 pF | 95 A | 1.5 V | 650 V | TO-263-2 | 175 ░C | -55 C | Surface Mount | ||||
Wolfspeed | No Recovery Time | 0 ns | 50 µA | SiC (Silicon Carbide) Schottky | TO-247-3 | 1.5 V | 650 V | TO-247-3 | 175 ░C | -55 C | Through Hole | 1 Pair Common Cathode | 50 A |