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IXFN48N55 - IXYK1x0xNxxxx

IXFN48N55

Obsolete
IXYS

MOSFET N-CH 550V 48A SOT-227B

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IXFN48N55 - IXYK1x0xNxxxx

IXFN48N55

Obsolete
IXYS

MOSFET N-CH 550V 48A SOT-227B

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN48N55
Current - Continuous Drain (Id) @ 25°C48 A
Drain to Source Voltage (Vdss)550 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs330 nC
Input Capacitance (Ciss) (Max) @ Vds [Max]8900 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)600 W
Rds On (Max) @ Id, Vgs110 mOhm
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)20 V
Vgs(th) (Max) @ Id4.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$

Description

General part information

IXFN48 Series

N-Channel 550 V 48A (Tc) 600W (Tc) Chassis Mount SOT-227B

Documents

Technical documentation and resources

No documents available