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IXFN48N60P - IXYK1x0xNxxxx

IXFN48N60P

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IXYS

MOSFET N-CH 600V 40A SOT227B

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IXFN48N60P - IXYK1x0xNxxxx

IXFN48N60P

Active
IXYS

MOSFET N-CH 600V 40A SOT227B

Deep-Dive with AI

Technical Specifications

Parameters and characteristics for this part

SpecificationIXFN48N60P
Drain to Source Voltage (Vdss)600 V
Drive Voltage (Max Rds On, Min Rds On)10 V
FET TypeN-Channel
Gate Charge (Qg) (Max) @ Vgs150 nC
Input Capacitance (Ciss) (Max) @ Vds8860 pF
Mounting TypeChassis Mount
Operating Temperature [Max]150 °C
Operating Temperature [Min]-55 °C
Package / CaseSOT-227-4, miniBLOC
Power Dissipation (Max)625 W
Rds On (Max) @ Id, Vgs [Max]140 mOhm
Supplier Device PackageSOT-227B
TechnologyMOSFET (Metal Oxide)
Vgs (Max)30 V
Vgs(th) (Max) @ Id5.5 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

DistributorPackageQuantity$
DigikeyTube 1$ 29.37
10$ 26.10
100$ 22.83
500$ 19.48

Description

General part information

IXFN48 Series

N-Channel 600 V 40A (Tc) 625W (Tc) Chassis Mount SOT-227B

Documents

Technical documentation and resources

No documents available