DSEI30-10A

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IXYS

DIODE GEN PURP 1KV 30A TO247AD

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IXYS

DIODE GEN PURP 1KV 30A TO247AD

Technical Specifications

Parameters and characteristics for this part

Specification	DSEI30-10A

Current - Average Rectified (Io)	30 A
Current - Reverse Leakage @ Vr	750 µA
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	150 °C
Operating Temperature - Junction [Min]	-40 °C
Package / Case	TO-247-2
Reverse Recovery Time (trr)	50 ns
Speed	200 mA, 500 ns
Supplier Device Package	TO-247AD
Technology	Standard
Voltage - DC Reverse (Vr) (Max) [Max]	1000 V
Voltage - Forward (Vf) (Max) @ If	2.4 V

Part	Voltage - DC Reverse (Vr) (Max) [Max]	Package / Case	Speed	Voltage - Forward (Vf) (Max) @ If	Mounting Type	Technology	Reverse Recovery Time (trr)	Current - Average Rectified (Io)	Supplier Device Package	Current - Reverse Leakage @ Vr	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]
IXYS DSEI30-10AR	1000 V	ISOPLUS247™	200 mA 500 ns	2.4 V	Through Hole	Standard	50 ns	30 A	ISOPLUS247™ (BR)	750 µA	150 °C	-40 °C
IXYS DSEI30-10A	1000 V	TO-247-2	200 mA 500 ns	2.4 V	Through Hole	Standard	50 ns	30 A	TO-247AD	750 µA	150 °C	-40 °C

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Diode 1000 V 30A Through Hole TO-247AD

Technical documentation and resources