GD2X20MPS12D

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GeneSiC Semiconductor

DIODE ARR SIC 1200V 39A TO247-3

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GD2X20MPS12D

Active

GeneSiC Semiconductor

DIODE ARR SIC 1200V 39A TO247-3

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Specifications Pricing Series Description Documents

Technical Specifications

Parameters and characteristics for this part

Specification	GD2X20MPS12D

Current - Average Rectified (Io) (per Diode)	39 A
Current - Reverse Leakage @ Vr	10 µA
Diode Configuration	1 Pair Common Cathode
Mounting Type	Through Hole
Operating Temperature - Junction [Max]	175 ░C
Operating Temperature - Junction [Min]	-55 C
Package / Case	TO-247-3
Reverse Recovery Time (trr)	0 ns
Speed	No Recovery Time
Supplier Device Package	TO-247-3
Technology	SiC (Silicon Carbide) Schottky
Voltage - DC Reverse (Vr) (Max) [Max]	1.2 kV
Voltage - Forward (Vf) (Max) @ If	1.8 V

GD2X Series

Part	Speed	Mounting Type	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Package / Case	Reverse Recovery Time (trr)	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor GD2X30MPS06D	No Recovery Time	Through Hole	30 A	175 °C	600 V	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode
GeneSiC Semiconductor GD2X30MPS06N	No Recovery Time	Chassis Mount	42 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X20MPS12D	No Recovery Time	Through Hole	39 A		1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode	175 ░C	-55 C	10 µA	1.8 V
GeneSiC Semiconductor GD2X100MPS06N	No Recovery Time	Chassis Mount	108 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	5 µA	1.8 V
GeneSiC Semiconductor GD2X60MPS06N	No Recovery Time	Chassis Mount	70 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	10 µA	1.8 V
GeneSiC Semiconductor GD2X10MPS12D	No Recovery Time	Through Hole	25 A		1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode	175 ░C	-55 C	5 µA	1.8 V
GeneSiC Semiconductor GD2X30MPS12N	No Recovery Time	Chassis Mount	52 A		1.2 kV	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X75MPS17N	No Recovery Time	Chassis Mount	115 A		1700 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X25MPS17N	No Recovery Time	Chassis Mount	50 A		1700 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	20 µA	1.8 V

Pricing

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

Distributor	Package	Quantity	$

Digikey	Tube	1	$ 12.18
		10	$ 11.02
		25	$ 10.58
		100	$ 9.96
		250	$ 9.57
		500	$ 9.29
		1000	$ 9.01

Description

General part information

GD2X Series

Diode Array 1 Pair Common Cathode 1200 V 39A (DC) Through Hole TO-247-3

Documents

Technical documentation and resources