GD2X Series

Catalog

DIODE ARRAY SIC 600V 30A TO247-3

Part	Speed	Mounting Type	Current - Average Rectified (Io) (per Diode)	Operating Temperature - Junction	Voltage - DC Reverse (Vr) (Max) [Max]	Supplier Device Package	Technology	Package / Case	Reverse Recovery Time (trr)	Diode Configuration	Operating Temperature - Junction [Max]	Operating Temperature - Junction [Min]	Current - Reverse Leakage @ Vr	Voltage - Forward (Vf) (Max) @ If
GeneSiC Semiconductor GD2X30MPS06D	No Recovery Time	Through Hole	30 A	175 °C	600 V	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode
GeneSiC Semiconductor GD2X30MPS06N	No Recovery Time	Chassis Mount	42 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X20MPS12D	No Recovery Time	Through Hole	39 A		1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode	175 ░C	-55 C	10 µA	1.8 V
GeneSiC Semiconductor GD2X100MPS06N	No Recovery Time	Chassis Mount	108 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	5 µA	1.8 V
GeneSiC Semiconductor GD2X60MPS06N	No Recovery Time	Chassis Mount	70 A		650 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	10 µA	1.8 V
GeneSiC Semiconductor GD2X10MPS12D	No Recovery Time	Through Hole	25 A		1.2 kV	TO-247-3	SiC (Silicon Carbide) Schottky	TO-247-3	0 ns	1 Pair Common Cathode	175 ░C	-55 C	5 µA	1.8 V
GeneSiC Semiconductor GD2X30MPS12N	No Recovery Time	Chassis Mount	52 A		1.2 kV	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X75MPS17N	No Recovery Time	Chassis Mount	115 A		1700 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC		2 Independent	175 ░C	-55 C
GeneSiC Semiconductor GD2X25MPS17N	No Recovery Time	Chassis Mount	50 A		1700 V	SOT-227	SiC (Silicon Carbide) Schottky	SOT-227-4 miniBLOC	0 ns	2 Independent	175 ░C	-55 C	20 µA	1.8 V