GD25D05EEEGR

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GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/DUAL 8USON

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GigaDevice Semiconductor (HK) Limited

IC FLASH 512KBIT SPI/DUAL 8USON

Technical Specifications

Parameters and characteristics for this part

Part	Operating Temperature [Max]	Operating Temperature [Min]	Technology	Memory Size	Supplier Device Package	Voltage - Supply [Min]	Voltage - Supply [Max]	Memory Type	Memory Interface	Write Cycle Time - Word, Page [custom]	Write Cycle Time - Word, Page [custom]	Clock Frequency	Package / Case	Memory Format	Memory Organization	Mounting Type	Access Time	Package / Case [y]	Package / Case [x]
GigaDevice Semiconductor (HK) Limited GD25D05CKIGR	85 °C	-40 °C	FLASH - NOR	64 kb	8-USON (1.5x1.5)	2.7 V	3.6 V	Non-Volatile	SPI - Dual I/O	4 ms	50 µs	100 MHz	8-XFDFN Exposed Pad	FLASH	64K x 8	Surface Mount
GigaDevice Semiconductor (HK) Limited GD25D05EEEGR	125 °C	-40 °C	FLASH - NOR (SLC)	64 kb	8-USON (3x2)	2.7 V	3.6 V	Non-Volatile	SPI - Dual I/O			104 MHz	8-XFDFN Exposed Pad	FLASH	64K x 8	Surface Mount	6 ns
GigaDevice Semiconductor (HK) Limited GD25D05EKIGR	85 °C	-40 °C	FLASH - NOR (SLC)	64 kb	8-USON (1.5x1.5)	2.7 V	3.6 V	Non-Volatile	SPI - Dual I/O	4 ms	100 µs	104 MHz	8-XFDFN Exposed Pad	FLASH	64K x 8	Surface Mount	6 ns
GigaDevice Semiconductor (HK) Limited GD25D05ETIGR	85 °C	-40 °C	FLASH - NOR (SLC)	64 kb	8-SOP	2.7 V	3.6 V	Non-Volatile	SPI - Dual I/O	4 ms	100 µs	104 MHz	8-SOIC	FLASH	64K x 8	Surface Mount	6 ns	3.9 mm	0.154 in

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General part information

FLASH - NOR (SLC) Memory IC 512Kbit SPI - Dual I/O 104 MHz 6 ns 8-USON (3x2)

Technical documentation and resources

No documents available