TK7S10N1Z,LXHQ

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

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Toshiba Semiconductor and Storage

MOSFET N-CH 100V 7A DPAK

Technical Specifications

Parameters and characteristics for this part

Specification	TK7S10N1Z,LXHQ

Current - Continuous Drain (Id) @ 25°C	7 A
Drain to Source Voltage (Vdss)	100 V
Drive Voltage (Max Rds On, Min Rds On)	10 V
FET Type	N-Channel
Gate Charge (Qg) (Max) @ Vgs	7.1 nC
Input Capacitance (Ciss) (Max) @ Vds	470 pF
Mounting Type	Surface Mount
Operating Temperature	175 °C
Package / Case	SC-63, DPAK (2 Leads + Tab), TO-252-3
Power Dissipation (Max) [Max]	50 W
Rds On (Max) @ Id, Vgs	48 mOhm
Supplier Device Package	DPAK+
Technology	MOSFET (Metal Oxide)
Vgs (Max)	20 V
Vgs(th) (Max) @ Id	4 V

Part	FET Type	Vgs(th) (Max) @ Id	Technology	Mounting Type	Current - Continuous Drain (Id) @ 25°C	Input Capacitance (Ciss) (Max) @ Vds	Rds On (Max) @ Id, Vgs	Drain to Source Voltage (Vdss)	Power Dissipation (Max) [Max]	Supplier Device Package	Gate Charge (Qg) (Max) @ Vgs	Operating Temperature	Grade	Vgs (Max)	Drive Voltage (Max Rds On, Min Rds On)	Qualification	Package / Case
Toshiba Semiconductor and Storage TK7S10N1Z,LQ	N-Channel	4 V	MOSFET (Metal Oxide)	Surface Mount	7 A	470 pF	48 mOhm	100 V	50 W	DPAK+	7.1 nC	175 °C	Automotive	20 V	10 V	AEC-Q101	DPAK (2 Leads + Tab) SC-63 TO-252-3
Toshiba Semiconductor and Storage TK7S10N1Z,LXHQ	N-Channel	4 V	MOSFET (Metal Oxide)	Surface Mount	7 A	470 pF	48 mOhm	100 V	50 W	DPAK+	7.1 nC	175 °C		20 V	10 V		DPAK (2 Leads + Tab) SC-63 TO-252-3

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General part information

N-Channel 100 V 7A (Ta) 50W (Tc) Surface Mount DPAK+

Technical documentation and resources