MOSFET N-CH 100V 7A DPAK
| Part | FET Type | Vgs(th) (Max) @ Id | Technology | Mounting Type | Current - Continuous Drain (Id) @ 25°C | Input Capacitance (Ciss) (Max) @ Vds | Rds On (Max) @ Id, Vgs | Drain to Source Voltage (Vdss) | Power Dissipation (Max) [Max] | Supplier Device Package | Gate Charge (Qg) (Max) @ Vgs | Operating Temperature | Grade | Vgs (Max) | Drive Voltage (Max Rds On, Min Rds On) | Qualification | Package / Case |
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
Toshiba Semiconductor and Storage | N-Channel | 4 V | MOSFET (Metal Oxide) | Surface Mount | 7 A | 470 pF | 48 mOhm | 100 V | 50 W | DPAK+ | 7.1 nC | 175 °C | Automotive | 20 V | 10 V | AEC-Q101 | DPAK (2 Leads + Tab) SC-63 TO-252-3 |
Toshiba Semiconductor and Storage | N-Channel | 4 V | MOSFET (Metal Oxide) | Surface Mount | 7 A | 470 pF | 48 mOhm | 100 V | 50 W | DPAK+ | 7.1 nC | 175 °C | 20 V | 10 V | DPAK (2 Leads + Tab) SC-63 TO-252-3 |