GE12047CCA3

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GE Aerospace

SIC 2N-CH 1200V 475A MODULE

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GE Aerospace

SIC 2N-CH 1200V 475A MODULE

Technical Specifications

Parameters and characteristics for this part

Specification	GE12047CCA3

Configuration	2 N-Channel (Half Bridge)
Current - Continuous Drain (Id) @ 25°C	475 A
Drain to Source Voltage (Vdss)	1200 V
Drain to Source Voltage (Vdss)	1.2 kV
Gate Charge (Qg) (Max) @ Vgs	1248 nC
Input Capacitance (Ciss) (Max) @ Vds	29300 pF
Mounting Type	Chassis Mount
Operating Temperature [Max]	150 °C
Operating Temperature [Min]	-55 °C
Package / Case	Module
Power - Max [Max]	1250 W
Rds On (Max) @ Id, Vgs	4.4 mOhm
Supplier Device Package	Module
Technology	Silicon Carbide (SiC)
Vgs(th) (Max) @ Id	4.5 V

Part	Package / Case	Technology	Power - Max [Max]	Gate Charge (Qg) (Max) @ Vgs	Input Capacitance (Ciss) (Max) @ Vds	Current - Continuous Drain (Id) @ 25°C	Mounting Type	Supplier Device Package	Configuration	Operating Temperature [Max]	Operating Temperature [Min]	Rds On (Max) @ Id, Vgs	Vgs(th) (Max) @ Id	Drain to Source Voltage (Vdss)	Drain to Source Voltage (Vdss)
GE Aerospace GE12047CCA3	Module	Silicon Carbide (SiC)	1250 W	1248 nC	29300 pF	475 A	Chassis Mount	Module	2 N-Channel (Half Bridge)	150 °C	-55 °C	4.4 mOhm	4.5 V	1200 V	1.2 kV

Prices provided here are for design reference only. For realtime values and availability, please visit the distributors directly

General part information

Mosfet Array 1200V (1.2kV) 475A 1250W Chassis Mount Module

Technical documentation and resources